J/ApJS/234/13 Relativistic MR-MP energy levels for Si (Santana+, 2018)
Relativistic MR-MP energy levels for L-shell ions of silicon.
Santana J.A., Lopez-Dauphin N.A., Beiersdorfer P.
<Astrophys. J. Suppl. Ser., 234, 13 (2018)>
=2018ApJS..234...13S 2018ApJS..234...13S
ADC_Keywords: Atomic physics
Keywords: atomic data ; line: identification
Abstract:
Level energies are reported for Si V, Si VI, Si VII, Si VIII, Si IX,
Si X, Si XI, and Si XII. The energies have been calculated with the
relativistic Multi- Reference Moller-Plesset Perturbation Theory
method and include valence and K-vacancy states with nl up to 5f. The
accuracy of the calculated level energies is established by comparison
with the recommended data listed in the National Institute of
Standards and Technology (NIST) online database. The average deviation
of valence level energies ranges from 0.20eV in SiV to 0.04eV in
SiXII. For K-vacancy states, the available values recommended in the
NIST database are limited to Si XII and Si XIII. The average energy
deviation is below 0.3eV for K-vacancy states. The extensive and
accurate data set presented here greatly augments the amount of
available reference level energies. We expect our data to ease the
line identification of L-shell ions of Si in celestial sources and
laboratory-generated plasmas, and to serve as energy references in the
absence of more accurate laboratory measurements.
File Summary:
--------------------------------------------------------------------------------
FileName Lrecl Records Explanations
--------------------------------------------------------------------------------
ReadMe 80 . This file
table1.dat 47 15819 Valence level energies in L-shell ions of Si evaluated
--------------------------------------------------------------------------------
See also:
J/A+AS/125/149 : CHIANTI- An Atomic Database For Emission Lines I. (Dere+ 1997)
J/A+AS/129/155 : Si XI + Si XIII lines Stark broadening (Dimitrijevic+ 1998)
J/ApJS/121/591 : Oscillator Strengths for SiVI (Coutinho+, 1999)
J/A+A/423/397 : Stark broadening of Si V (Ben Nessib+, 2004)
J/A+A/508/1527 : SiII Radiative transition rates (Bautista+, 2009)
J/A+A/522/A103 : Si.XI K-shell energy levels and radiative rates (Wei+, 2010)
J/A+A/541/A61 : Oscillator and collision strengths for SiVIII (Tayal+, 2012)
J/ApJS/207/11 : Fe XVI radiative rates (Diaz+, 2013)
J/A+A/559/A100 : Boron isoelectronic sequence data (Jonsson+, 2013)
J/A+A/566/A105 : SiIX K-shell energy levels and transitions (Wei+, 2014)
J/ApJ/787/2 : Effective collision strengths of Si VII (Sossah+, 2014)
J/ApJS/215/26 : Energy levels & transition rates of C-like ions (Wang+, 2014)
J/A+A/566/A105 : SiIX K-shell energy levels and transitions (Wei+, 2014)
J/ApJS/218/16 : Energy levels & transition rates of Be-like ions (Wang+, 2015)
J/A+A/585/A26 : Silicon isoelectronic sequence data (Jonsson+, 2016)
Byte-by-byte Description of file: table1.dat
--------------------------------------------------------------------------------
Bytes Format Units Label Explanations
--------------------------------------------------------------------------------
1- 2 I2 --- N [3/10] Number of electrons
4- 7 I4 --- Index [1/3900] Level index
9- 25 A17 --- Config The jj-Configuration (1)
27- 30 A4 --- J J level
32- 35 A4 --- Parity Parity; odd/even
37- 47 F11.6 eV Energy [0/4310] Present MR-MP energies
--------------------------------------------------------------------------------
Note (1): s = s1/2, p- = p1/2, p+ = p3/2, d- = d3/2, d+ = d5/2,
f- = f5/2 and f+ = f7/2. The number after the -/+ symbols is
the power of the corresponding configuration. For example, the
jj-configuration of level 15 in Li-like Si is 1s1/224f7/2.
--------------------------------------------------------------------------------
History:
From electronic version of the journal
(End) Prepared by [AAS], Emmanuelle Perret [CDS] 15-Mar-2018